- , $ 1 * 6 8 & + $ 1 * - , $ 1 * ( / ( & 7 5 2 1 , & 6 7 ( & + 1 2 / 2 * < & 2 / 7 ' 7 2 -3l 3 o d v w l f ( q f d s v x o d w h 7 u d q v l v w r u v 0 - ' transistor npn ) ( $ 7 8 5 ( 6 ? high dc current gain ? electrically similar to popular tip122 ? built-in a damper diode at e-c 0 $ ; , 0 8 0 5 $ 7 , 1 * 6 ( t a =25 unless otherwise noted) 6 \ p e r o 3 d u d p h w h u 9 d o x h 8 q l w 9 & % 2 collector-base voltage 100 v 9 & ( 2 collector-emitter voltage 100 v 9 ( % 2 emitter-base voltage 5 v , & collector current -continuous 8 a 3 & collector dissipation 1.5 w 7 - 7 v w j junction and storage te mperature -55-150 ( / ( & 7 5 , & $ / & + $ 5 $ & 7 ( 5 , 6 7 , & 6 ( 7 d x q o h v v r w k h u z l v h v s h f l i l h g ) 3 d u d p h w h u 6 \ p e r o 7 h v w f r q g l w l r q v 0 l q 7 \ s 0 d [ 8 q l w & r o o h f w r u e d v h e u h d n g r z q y r o w d j h v (br)cbo ic= 1 ma,i e =0 100 v & r o o h f w r u h p l w w h u e u h d n g r z q y r o w d j h v (br)ceo ic= 30 ma,i b =0 100 v ( p l w w h u e d v h e u h d n g r z q y r o w d j h v (br)ebo i e = 3 ma,i c =0 5 v & r o o h f w r u f x w r i i f x u u h q w i cbo v cb = 100 v,i e =0 10 a & r o o h f w r u h p l w w h u f x w r i i f x u u h q w i ceo v ce = 50 v,i e =0 10 a ( p l w w h u f x w r i i f x u u h q w i ebo v eb = 5 v,i c =0 2 ma h fe(2) v ce = 4 v,i c = 4 a 1000 12000 ' & f x u u h q w j d l q h fe(3) v ce = 4 v,i c =8a 100 v ce(sat) 1 i c = 4 a,i b = 16 ma 2 v & r o o h f w r u h p l w w h u v d w x u d w l r q y r o w d j h v ce(sat) 2 i c = 8 a,i b =80ma 4 v % d v h h p l w w h u v d w x u d w l r q y r o w d j h v be(sat) i c = 8 a,i b =80ma 4.5 v % d v h h p l w w h u y r o w d j h * v be v ce = 4 v,i c =4a 2.8 v & r o o h f w r u r x w s x w f d s d f l w d q f h c ob v cb = 10 v,i e =0,f= 0.1 mhz 200 pf 7 2 / 1. base 2. collector 3 . emitter www.cj-elec.com 1 d,oct,2014
0.1 1 10 10 100 1000 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 012345 0 1 2 3 4 5 0.1 1 100 1000 10000 100000 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 0.1 1 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 0.4 0.8 1.2 1.6 2.0 0.1 1 0.4 0.8 1.2 1.6 2.0 f=1mhz i e =0/i c =0 t a =25 20 v cb / v eb c ob / c ib c ob c ib capacitance c (pf) reverse voltage v (v) common emitter v ce =4v t a =100 t a =25 collector current i c (a) base-emmiter voltage v be (v) 0.52ma 0.48ma 0.44ma 0.4ma 0.36ma 0.32ma 0.28ma 0.24ma 0.2ma i b =0.16ma static characteristic common emitter t a =25 collector current i c (a) collector-emitter voltage v ce (v) common emitter v ce =4v 8 i c t a =25 t a =100 dc current gain h fe collector current i c (a) MJD122 typical characterisitics p c t a collector power dissipation p c (w) ambient temperature t a ( ) 8 v be 8 =100 i c v besat t a =100 t a =25 base-emitter saturation voltage v besat (v) collector current i c (a) h fe =100 i c v cesat 8 t a =25 t a =100 collector-emitter saturation voltage v cesat (v) collector current i c (a) i c i c v cesat t a =25 t a =100 =250 8 collector-emitter saturation voltage v cesat (v) collector current i c (a) www.cj-elec.com 2 d,oct,2014 typical characteristics
www.cj-elec.com 3 d,oct,2014 to-251-3l package outline dimensions m i n. m a x. m i n . m ax. a 2. 2 00 2. 400 0 . 087 0. 0 94 a 1 1. 0 50 1. 350 0 . 042 0. 0 54 b 1. 3 50 1. 650 0 . 053 0. 0 65 b 0. 5 00 0. 700 0 . 020 0. 0 28 b1 0. 7 00 0. 900 0 . 028 0. 0 35 c 0. 4 30 0. 580 0 . 017 0. 0 23 c 1 0. 4 30 0. 580 0 . 017 0. 0 23 d 6. 3 50 6. 650 0 . 250 0. 2 62 d 1 5. 2 00 5. 400 0 . 205 0. 2 13 e 5. 4 00 5. 700 0 . 213 0. 2 24 e e1 4. 5 00 4. 700 0 . 177 0. 1 85 l 7. 5 00 7. 900 0 . 295 0. 3 11 s y m bol d i m e n s io n s in m i llim e t e r s d im e n s i o n s in in c h e s 2. 3 00 t y p . 0 . 091 t y p .
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